cem volvo

This talks about BDM used on card Engine computer
ZRimaZ
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Post by ZRimaZ »

usbbdm wrote:Just fix the link.
OK, thanks. And what about xml?
usbbdm
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Post by usbbdm »

The read from USB BDM NT is not flipped. Your file is flipped.
Try this file and see if it works for you.
Put the xml under the config folder and select TCEM04.
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ZRimaZ
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Post by ZRimaZ »

Still something wrong...No I have no errors, but just tried to erase/write, there's something wrong - not everything is written correctly, will check and report later
ZRimaZ
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Post by ZRimaZ »

OK, coming back with some review.
Program log:
Copyright (C) 2010-2015
USB BDM NT 0.81
Target: CEM04
-speed 1
-reset 1
Found Address= 00000000 Intel AB28F400B5-B
-getram 0 80000
Time 00:00:02 (.443)
-save Code
C:/Users/Rimas/Desktop/tst usbbdm/t1.bin Saved
-erase Code
Erase starts...
Erase time 00:00:02 (.782)
-getram Code
Time 00:00:02 (.444)
-getram Code
Time 00:00:02 (.443)
-ldram Code
C:/Users/Rimas/Desktop/tst usbbdm/CEM FLASH 28F400 XC90_2003_D5244T_AW50-51AWD_YV1CM793731018298 30657428_03W056_HW-PN_8688434_2341987 ori.bin loaded
-erase Code
Erase starts...
Erase time 00:00:02 (.734)
Program Starts...
Program speed 22.03 KB/s
Program time 00:00:23 (.802)
Program pass, if no further programming needed, power off/on the target
-reset 1
Found Address= 00000000 Intel AB28F400B5-B
-getram Code
Time 00:00:02 (.443)
-cmpram Code
Time 00:00:02 (.443)
Compare data OK
-save Code
C:/Users/Rimas/Desktop/tst usbbdm/t1 read after write.bin Saved
-reset 1
Found Address= 00000000 Intel AB28F400B5-B
-erase Code
Erase starts...
Erase time 00:00:02 (.726)
-getram Code
Time 00:00:02 (.444)
-save Code
C:/Users/Rimas/Desktop/tst usbbdm/t2 after erase.bin Saved
-ldram Code
C:/Users/Rimas/Desktop/tst usbbdm/CEM FLASH 28F400 XC90_2003_D5244T_AW50-51AWD_YV1CM793731018298 30657428_03W056_HW-PN_8688434_2341987 ori.bin loaded
-erase Code
Erase starts...
Erase time 00:00:02 (.667)
Program Starts...
Program speed 22.03 KB/s
Program time 00:00:23 (.802)
Program pass, if no further programming needed, power off/on the target
-reset 1
Found Address= 00000000 Intel AB28F400B5-B
-getram Code
Time 00:00:02 (.444)
-save Code
C:/Users/Rimas/Desktop/tst usbbdm/t3 read after erase and write.bin Saved


1. Wrote whole file "tst usbbdm/CEM FLASH 28F400 XC90_2003_D5244T_AW50-51AWD_YV1CM793731018298 30657428_03W056_HW-PN_8688434_2341987 ori.bin"
2. Red it to file "t1 read after write.bin"
3. Compared both - there's a lot of differences.
4. Erased flash and red it to file "t2 after erase.bin". File is not blank.
5. Wrote "tst usbbdm/CEM FLASH 28F400 XC90_2003_D5244T_AW50-51AWD_YV1CM793731018298 30657428_03W056_HW-PN_8688434_2341987 ori.bin" again.
6. Red it again to file "t3 read after erase and write.bin" and compared it to file written - big differences.

???
28F400 Vpp leg ws connected via 100Ohm resistor to +5v, All power Offs/Ons after writing are done.

Tried to erase with Vpp leg not connected to anything, result the same as "t2 after erase.bin"
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usbbdm
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Post by usbbdm »

You need to pull to 12v. 5v is not enough. Start with 150 ohm first,if it is not working then try 100ohm
ZRimaZ
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Post by ZRimaZ »

usbbdm wrote:You need to pull to 12v. 5v is not enough. Start with 150 ohm first,if it is not working then try 100ohm
Pulled up with 100 Ohm, did erase, result is exactly the same as without pull-up or pull-up with 5V

Checked voltage on Vpp pin with disconnected pull-up resistor - there already is constantly +5V!

:confused:
usbbdm
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Post by usbbdm »

Datasheet says "Increased Programming Throughput
at 12 V VPP"
You need to close to 12V.

"PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or
programming data in each block, a voltage either of 5 V ± 10% or 12 V ± 5% must
be applied to this pin. When VPP < VPPLK all blocks are locked and protected
against Program and Erase commands."
ZRimaZ
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Post by ZRimaZ »

usbbdm wrote:Datasheet says "Increased Programming Throughput
at 12 V VPP"
You need to close to 12V.

"PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or
programming data in each block, a voltage either of 5 V ± 10% or 12 V ± 5% must
be applied to this pin. When VPP < VPPLK all blocks are locked and protected
against Program and Erase commands."
And the same datasheet says:
"The 12 V VPP option renders the fastest program and erase
performance which will increase your factory
throughput. With the 5 V VPP option, VCC and VPP
can be tied together for a simple 5 V design
. In
addition, the dedicated VPP pin gives complete data
protection when VPP ≤ VPPLK."

I checked the connections on the board and found VCC connected with VPP, it means in my case VPP=5V.

Also, the same datasheet on Table 5.4 says, that VPPLK voltage levels are 0.0V (min)-1.5V(max).

:confused::confused::confused:
usbbdm
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Post by usbbdm »

If you want erase and program use 12V, this is what I know. I think above 11.xv should be fine.
ZRimaZ
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Post by ZRimaZ »

usbbdm wrote:If you want erase and program use 12V, this is what I know. I think above 11.xv should be fine.
OK, I pulled off VPP pin from PCB and connected it via 100 Ohm to +12v. Checked voltage on VPP - almost = 12V. Erased, red, result-the same as before with different pull-ups. WTF? BTW, some flash regions are erased - =FF, some - with code, not erased - just check files on post #11.
usbbdm
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Post by usbbdm »

Is the first few blocks not erased? That is boot block and need to read the datasheet carefully. I vaguely remember something before.
usbbdm
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Post by usbbdm »

Check this
WRITE PROTECT: Provides a method for unlocking the boot block with a logic
level signal in a system without a 12 V supply.
When WP# is at logic low, the boot block is locked, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked and can be
programmed or erased.
NOTE: This feature is overridden and the boot block unlocked when RP# is at
VHH. This pin can not be left floating. Because the 8-Mbit 44-PSOP package does
not have enough pins, it does not include this pin and thus 12 V on RP# is
required to unlock the boot block. See Section 3.3 for details on write protection
usbbdm
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Post by usbbdm »

Check http://www.usbjtag.com/jtagnt/ecu411/index.php
Only need to pull WPP pin not the vpp pin.
ZRimaZ
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Post by ZRimaZ »

OK, final result and conclusions:

Everything is OK, tested on the car, after cloning to another CEM, the car runs, looks like everything OK.

VPP for this type of CEM does not matter, whether it is pulled-up neither to +12V, nor to +5V, nor pulled-off from PCB - it's connected to VCC on the PCB and it's working.

Regarding boot block, I agree, I was afraid that "alien" boot block with do something wrong for CEM, running the program in different way than has to. Now tested, does not matter - it's my lack of education :D

For now, at least for me, the case is closed, thanks for the help! The life with this programmer from now will be little bit easier :D :rolleyes:
ZRimaZ
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Joined: Fri Oct 07, 2016 1:11 am

Post by ZRimaZ »

usbbdm wrote:Check http://www.usbjtag.com/jtagnt/ecu411/index.php
Only need to pull WPP pin not the vpp pin.
OK, but on volvo CEM we have PSOP 44 package, therefore:

"This feature is overridden and the boot block unlocked when RP# is at
VHH. This pin can not be left floating. Because the 8-Mbit 44-PSOP package does not have enough pins, it does not include this pin and thus 12 V on RP# is
required to unlock the boot block. "

Now I checked the PCB, my RP# is pulled down via 100Ohm resistor to GND. Will it be also possible to erase/write boot blocks if I will pull it up to +5v or +12V, am I right?
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